Abstract:
Emerging mid and high voltage applications in consumer power supplies, alternate energy and data centers are requiring improved power efficiencies, higher operating frequencies and system size reductions. GaN devices have now been introduced in market that deliver on these parameters over Si devices. However to produce these devices in volume at yield, reliability and cost targets requires GaN-Si MOCVD to rise to the next level. MOCVD process now has to deliver superior film quality with a tight run to run control, low defectivity and high uptime. In response to these high volume production requirements, Veeco has developed the next generation MOCVD system based on single wafer architecture that has demonstrated industry leading performance at multiple customers. In this talk we will discuss these results as relevant to high volume production requirements.