Abstract:
Plasma dicing has gained acceptance within the semiconductor industry as a viable alternative to conventional singulation methods using saw blades or lasers. To meet the needs of the industry, it is critical that through-wafer dicing of framed 300mm wafers is now made available to device manufacturers looking to switch to this technology. Deep Reactive Ion Etch (DRIE), also known as The Bosch Process, offers considerable benefits to users for die singulation, with opportunities to achieve increased die counts & throughput, flexibility for die layout & design and, perhaps most important of all, improved die quality/strength.
SPTS customers have been using our DRIE systems for production “dice before grind” (DBG) for a several years for 150mm, 200mm & 300mm, and more recently the Rapier-200S for framed 150mm & 200mm wafers. But, through-wafer dicing of thinned 300mm wafers on tape frames –“dice after grind” (DAG), introduces a new challenge in handling and clamping of larger 400mm frames inside the process module. SPTS has now introduced a new handling solution, the Rapier-300S, based on the Rapier-200S, which is designed specifically for plasma dicing of 300mm framed wafers in volume production.
Using SPTS’ world leading DRIE expertise & technology, the Rapier-300S offers capability for the high speed with low non-uniformities necessary to achieve the high throughput required for this cost sensitive step. Dicing lanes from <10µm to >100µm can be etched with wafer thicknesses <50µm to full thickness handled and singulated successfully.
Unique aspects of SPTS’ plasma dicing technology include the use of our patented Claritas™ end-point detection system, which provides the earliest possible detection of the lane clearing, allowing the use of patented “bias pulsing” techniques to prevent lateral damage of the die sidewall and causing a reduction in die strength.