Synthesis of Thermochromic Vanadium Dioxide Films Prepared by Reactive High Power Impulse Magnetron Sputtering at Low Temperature (300℃)
(Room Room 104-A)
01 May 19
10:00 AM
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10:20 AM
Tracks:
High Power Impulse Magnetron Sputtering – HIPIMS
Vanadium dioxide (VO2) is an interesting reversible semiconductor-to-metal phase transition material have wide-ranging applications in smart window, optical and electric switches, modulators, and uncooled microbolometer because of its excellent thermochromic and thermoelectric properties. However, it is a challenge to generate a good stoichiometric monoclinic vanadium dioxide VO2 (M) thin films because of its variety of oxidation states and crystal phase. In this study, VO2 films were deposited on B270 glass prepared by reactive high power impulse magnetron sputtering (R-HiPIMS) using close-loop plasma-emission-controlled (PEM) at different substrate temperature without adding substrate bias and post annealing process. The optimum thermochromic film was prepared at substrate temperature of 300 °C. The transmittance difference of wavelength at 2500 nm (ΔT2500 nm) for VO2 film before and after phase transition (25 °C and 95 °C) was 18.65 %, the resistivity change was 0.082 Ω∙cm and the temperature coefficient of resistance (TCR) was -7.02%/°C in the temperature range at 60-70 °C. The stoichiometric of VO2 films, the oxygen vacancy decreased with low substrate temperature, as proved by the XPS and Raman measurements. The results indicate that a thermochromic VO2 thin film process technology with high stability and low substrate temperature.