Comparing the Behaviour of Saturated and Non-Saturated Reactive Sputtering Processes
(Room Room 104-B)
01 May 19
10:40 AM
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11:00 AM
Tracks:
Large Area Coatings
Reactive sputtering with reactive gases like oxygen and nitrogen are used for deposition of oxides or nitrides. Excess supply of the reactive gas will not cause the film compositions to significantly exceed the stoichiometric values. Since the film composition saturates at stoichiometric oxide or nitride we choose to call such processes saturated reactive sputtering processes. The well-known "Berg model" is one of the existing models that quite well describes such saturated processes. Using reactive gases like hydrocarbons, sulfides or silanes during reactive sputtering may result in decomposition of the gases into solid carbon, sulfur or silicon respectively that will be deposited onto the substrate even if they do not chemically form a compound. Such processes may result in film compositions ranging from (0 – 100%) of C, S or Si respectively. There exists no natural limitation of the composition of the deposited film. We therefore choose to call such processes non-saturated reactive sputtering processes. In this presentation we will outline a new quite simple first order model that may serve to illustrate the behavior of such processes. We want to do this since our original Berg-model cannot be used to correctly describe non-saturated reactive sputtering processes.