Microwave Plasma Assisted Chemical Vapor Deposition of SiOx Films
(Room Room 104-A)
02 May 19
5:00 PM
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5:20 PM
Tracks:
Plasma Processing
SiOx is part of many optical and electrical applications. In optical applications, SiOx is often used as low-index material and in electrical applications as insulator. In both cases, a defect-free deposition is essential. CVD processes are favored in industrial applications due to their higher deposition rates compared to reactive sputtering. Especially microwave excitation offers a great tool for very high deposition rates. Therefore, this presentation will focus on microwave processes depositing SiOx films with HMDSO as precursor gas. The influence of the working pressure, the amount of reactive gas, the source power on the plasma and film properties will be discussed. Optical emission spectroscopy was used to determine the plasma properties. The films were characterized with respect to hardness, electrical breakdown voltage, and optical properties. Furthermore, SEM investigations show the topography and morphology of the films.