Effect of HIPIMS Pulse Mode and Pulse Parameters on a Reactive SiOx Deposition Process
(Room Room 104-A)
30 Apr 19
11:20 AM
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11:40 AM
Tracks:
High Power Impulse Magnetron Sputtering – HIPIMS
Silicon oxides are widely used thin films. Due to their optical transparency and dielectric properties they are commonly used in optical applications. A high hardness and good scratch resistance are desired to maintain optical performance over a long period of use. The High Power Impulse Magnetron Sputtering technology (HIPIMS) is well-known for depositing a hard and dense coating, providing the opportunity to improve the properties of SiOx thin films. Effect of HIPIMS discharge on the Si deposition process stability is unknown. In this work we discuss HIPIMS operating on Si targets, both on 4” laboratory size and on an industrial 1321 x 127 mm target. Process stability in a reactive O2 atmosphere is investigated in uni-polar (monopulse) and bi-polar (bipulse) pulsing modes. Effect of the O2 partial pressure on the plasma ionization is investigated using optical emission spectroscopy and a Langmuir flat probe. A positive influence of a reverse voltage on arcing rate is discussed. Moreover, it was observed that arcing rate can be lowered by changing the pulse shape, especially with the reduction of the current rising rate. Finally, the effect of the pulse duration and frequency on the cathode current, cathode voltage and ion flux is investigated in detail.