GaN-on-Diamond Wafer Fabricated by Dual-sided Diamond Films Deposition
(Room Exhibit Hall A)
30 Apr 19
2:30 PM
-
4:00 PM
The GaN-on-Diamond structure can effectively mitigate the heat dissipation issue and enhance the thermal performance and stability of high-power GaN electronic devices. However, the preparation of GaN-on-Diamond structure is quite complicated and with high demanding. It requires not only adding the temporary carrier and removing the original substrate, but solving the thermal mismatch problem between GaN and the diamond. This study investigated a novel method of fabricating diamond films on dual side to retains the heat dissipation of the substrate side diamond. First, one diamond film was deposited at low temperature by using a Si interlayer as a protecting coating at the Ga-face. Then, the original substrate of GaN wafer was removed by mechanical grinding combined with ICP etching methods. After that, a SiN dielectric layer was deposited on the surface of the exposed GaN wafer. Then the second high quality diamond film was deposited on the SiN surface as the heat dissipation layer. Finally, after removing the first low quality diamond film by selectively etching the Si interlayer, a complete and dense GaN-on-diamond wafer was fabricated successfully.