Comparison of Two Synthesis Methods to Deposit Silicon Nitride (Si3N4) Thin Films
(Room Exhibit Hall A)
30 Apr 19
2:30 PM
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4:00 PM
Silicon nitride thin film is a well-known kind of material in semiconductor industries. These films are used in important applications such as protective layers; insulators for optical devices, etc. It is also an important material in microelectronics due to its high resistivity, higher dielectric constant compared to silicon dioxide, mechanical strength, and chemical inertness. It is used as a gate insulator in thin film transistors that are in flat panel displays. In this work we have fabricated Silicon Nitride (Si3N4) thin films using RF magnetron sputtering method using Si3N4 Target. P-doped, N-doped Si wafers, sapphire wafers and glass plates are used as substrate material. We will also fabricate Silicon nitride thin films with Si target and N2 as process gas. It will be cost effective because Si targets are cheaper than Si3N4 targets. To compare the sputtered grown samples from both recipes, scanning electron microscopy (SEM) and atomic force microscopy (AFM) will be employed. Both high and low temperatures will be used for depositions so that we can find out the optimum conditions for silicon nitride deposition with highest purity possible. Silicon nitride films are mainly prepared by chemical vapor deposition (CVD) and plasma enhanced chemical vapor deposition (PECVD).