SEMICON Europa 2016

Clement Merckling
Principle Scientist
imec


Clement MERCKLING received the Dipl.-Ing. degree in Microelectronics in 2004 from the Superior Institute of Electronic and Numeric (ISEN) and the M. S. degree in Material Sciences in 2004 from the University of Lille. He obtained his Ph. D. graduation in Material Sciences from the Ecole Centrale de Lyon in 2007. His researches were focused on the Molecular Beam Epitaxial (MBE) growth of High-k dielectrics on Si for CMOS devices. In 2007, as postdoctoral research associate from the Katholieke Universiteit of Leuven, he joined IMEC Ge/III-V program. During the period 2008 - 2013, he was research and then senior scientist at IMEC, driving the Molecular Beam Epitaxy (MBE) activities including III-V semiconductors epitaxy, high-k oxides growth and high-? channels (Ge, III-As, III-P & III-Sb) passivation studies. Since 2013, as a principle scientist, he took responsibility of all Group III-V epitaxy activities, focusing on selective area growth of III-V compounds by Vapor Phase Epitaxy (MOVPE), key step for future CMOS technology nodes. He is the author or co-author of more than 100 papers in scientific journals and more than 120 contributions to international conferences. He received in 2008 the “Young Scientist Award” from the City of Lyon as well as the Researcher (CR2) CNRS entrance exam from France.

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