SEMICON Korea 2019
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S4. Plasma Science and Etching Technology
(
Room
#307, COEX
)
24 Jan 19
1:00 PM
-
6:10 PM
Tracks:
STS
Speaker(s):
Adam Stover, Applications Manager, Edwards Vacuum;
Joseph Ervin, Director, Semiconductor Process & Integration, Lam Research (Coventor);
Masayuki Tomoyasu, Corporate SVP, Process Development, Semiconductor R&D Center, Samsung Electronics;
Mohamed Boufnichel, PhD / ST Expert / R&D Etch Process Manager, ST Microelectronics (invited);
Sebastian U. Engelmann, Research Staff Member / Manager of Advanced Plasma Processing group, IBM Research (invited);
Hyoungcheol Kwon, Tech Leader (Senior Engineer), SK hynix;
Thorsten Lill, VP Emerging Etch Technologies and Systems, Lam Research;
ShinJae You, Professor, Chungnam National University (invited);
Mike Cooke, CTO, Plasma Technology Business, Oxford Instruments Plasma Technology;
Keun Hee Bai, Dr / Principal engineer, Samsung Electronics (invited)
[Plasma Etch Process Technologies for Next Generation Devices] The semiconductor business is exploded in this year and the need for semiconductor chips will be more increased in the future by the explosive increase of big data, AI chips and autonomous vehicles. But there exist many limitations at the fabrication of the next generation chips and especially the plasma etching technology will confront the severe limitation. The most critical problems at the plasma etching process have been always related with etch loading, selectivity and variation at the more shrinked patterns and the problem is that there is no plasma etchers to provide the sufficient capability at the next generation. To overcome those limitations we must developed efficient vacuum system, plasma and process simulation S/W as well as high performance plasma etcher including ALE, IBE(Ion beam etch) and ultra low temperature etch. Especially the ALE, IBE and ultra low temperature etch technologies emerged as the very promising ones for replacing the conventional etchers, and those provide unique etch characteristics for the next generation devices fabrication. We invited the specialists on the above technical areas from worldwide and we will provide the good chances to get the insight on the next generation etch technologies at this symposium. We wish that the coming symposium will contribute to the expansion of the future technologies for overcoming the limitation on the next generation devices fabrication. Too see session agenda,
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